r07ds0353ej0200 rev.2.00 page 1 of 6 apr 15, 2011 preliminary datasheet RJP30E3DPP-M0 silicon n channel igbt high speed power switching features ? trench gate technology (g5h series) ? low collector to emitter saturation voltage v ce(sat) = 1.6 v typ ? high speed switching tf = 150 ns typ ? low leak current i ces = 1 a max ? isolated package to-220fl outline renesas package code: prss0003af-a) (package name: to-220fl) 1 2 3 1. gate 2. collector 3. emitter c g e absolute maximum ratings (ta = 25c) item symbol ratings unit collector to emitter voltage v ces 360 v gate to emitter voltage v ges 30 v collector current i c 40 a collector peak current ic(peak) note1 250 a collector dissipation p c note2 30 w junction to case thermal impedance j-c 4.17 c/ w junction temperature tj 150 c storage temperature tstg ?55 to +150 c notes: 1. pw 10 s, duty cycle 1% 2. tc = 25 c r07ds0353ej0200 rev.2.00 apr 15, 2011
RJP30E3DPP-M0 preliminary r07ds0353ej0200 rev.2.00 page 2 of 6 apr 15, 2011 electrical characteristics (ta = 25c) item symbol min typ max unit test conditions zero gate voltage collector current i ces ? ? 1 a v ce = 360 v, v ge = 0 gate to emitter leak current i ges ? ? 100 na v ge = 30 v, v ce = 0 gate to emitter cutoff voltage v ge(off) 2.5 ? 5 v v ce = 10 v, i c = 1 ma collector to emitter saturation voltage v ce(sat) ? 1.6 2.1 v i c = 40 a, v ge = 15 v note3 input capacitance cies ? 1700 ? pf output capacitance coes ? 85 ? pf reveres transfer capacitance cres ? 40 ? pf v ce = 25 v v ge = 0 f = 1 mhz total gate charge qg ? 52 ? nc gate to emitter charge qge ? 9 ? nc gate to collector charge qgc ? 15 ? nc v ge = 15 v v ce = 150 v i c = 40 a t d(on) ? 0.04 ? s t r ? 0.12 ? s t d(off) ? 0.09 ? s switching time t f ? 0.15 ? s i c = 40 a r l = 4 v ge = 15 v r g = 5 notes: 3. pulse test.
RJP30E3DPP-M0 preliminary r07ds0353ej0200 rev.2.00 page 3 of 6 apr 15, 2011 main characteristics typical output characteristics (2) typical transfer characteristics 200 160 120 80 40 246810 typical output characteristics (1) 100 80 60 40 20 12345 pulse test ta = 25 c pulse test ta = 25 c 5 v 5.2 v 5.4 v 5.6 v 5.8 v 6 v 6.4 v 6.8 v 6.2 v 7 v 8 v 9 v 11 v 15 v 10 v 15 v collector current i c (a) collector current i c (a) collector current i c (a) collector current i c (a) collector current i c (a) maximum safe operation area 1000 100 10 0.1 1 10 100 1 0.1 0.01 1000 0 20 40 60 80 100 0 0 0 0 0 246810 0 0 4 8 12 20 16 collector to emitter saturation voltage vs. gate to emitter voltage (typical) collector to emitter saturation voltage vs. collector current (typical) collector to emitter saturation voltage v ce(sat) (v) collector to emitter saturation voltage v ce(sat) (v) 40 a 80 a 0.1 1 10 1 10 100 75c 25c tc = ?25 c i c = 120 a v ge = 4.8 v 5.5 v 6 v 6.5 v 7 v 7.5 v 8 v 9 v v ge = 5 v pulse test ta = 25 c v ge = 15 v pulse test v ce = 10 v pulse test collector to emitter voltage v ce (v) collector to emitter voltage v ce (v) collector to emitter voltage v ce (v) gate to emitter voltage v ge (v) gate to emitter voltage v ge (v) 75c 25c tc = ?25 c 0 4 2 6 8 10 10 s ta = 25 c 1 shot pulse pw = 100 s
RJP30E3DPP-M0 preliminary r07ds0353ej0200 rev.2.00 page 4 of 6 apr 15, 2011 switching characteristics (typical) (1) switching characteristics (typical) (3) switching characteristics (typical) (2) 10 100 1000 10000 0 20406080100 cies coes cres colloctor to emitter voltage v ce (v) gate to emitter voltage v ge (v) 400 300 200 100 0 0 16 12 8 4 0 20 40 60 80 100 v ge v ce v ce = 250 v 150 v v ce = 250 v 150 v v ge = 0 v f = 1 mhz ta = 25 c 1 10 100 t d(off) t d(on) t d(on) t f t f t r t r t d(off) t d(on) t f t r 10 100 gate resistance rg ( ) collector current i c (a) collector to emitter voltage v ce (v) typical capacitance vs. collector to emitter voltage dynamic input characteiristics (typical) gate charge qg (nc) capacitance c (pf) case temparature tc ( c) switching time t (ns) 1000 1 10 100 10 100 switching time t (ns) 1000 10 100 switching time t (ns) 1000 0 255075100125150 i c = 40 a, r l = 4 v ge = 15 v, ta = 25 c i c = 40 a i c = 40 a, r l = 4 v ge = 15 v, rg = 5 v cc = 150 v, v ge = 15 v rg = 5 , ta = 25 c t d(off)
RJP30E3DPP-M0 preliminary r07ds0353ej0200 rev.2.00 page 5 of 6 apr 15, 2011 normalized transient thermal impedance s (t) 1 m 10 m 100 m 1 10 pulse width pw (s) 1 0.3 3 0.1 0.03 0.01 10 0.001 0.003 d = 1 0.5 1shot pulse 0.2 0.1 0.05 0.02 0.01 tc = 25 c normalized transient thermal impedance vs. pulse width p dm pw t d = pw t j ? c(t) = s (t) ? j ? c j ? c = 4.17 c/w, tc = 25 c 1 0 10 0 switching time test circuit waveform ic monitor vin monitor d.u.t. rg vin = 15 v v cc 10% t f tr t d(off) t d(on) ic vin 90% 90% 90% 10% 10% t on t off r l
RJP30E3DPP-M0 preliminary r07ds0353ej0200 rev.2.00 page 6 of 6 apr 15, 2011 package dimension unit: mm previous c od e pr ss0003 af- a t o -22 0 f l mass[t y p. ] 1.5 g ? 3.2 0.2 0.75 0.15 1.15 0.2 2.54 0.25 2.54 0.25 2.6 0.2 4.5 0.2 0.40 0.15 2.8 0.2 1.15 0.2 3.0 0.3 ordering information orderable part number quan tity shipping container RJP30E3DPP-M0-t2 600 pcs box (tube)
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